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Novel type of computer memory
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance
Resistive random-access memory
Resistive_random-access_memory
Type of computer memory
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s
Magnetoresistive_RAM
Physical magnetic effect
elements in magnetic random-access memory. Spin-transfer torque magnetic random-access memory (STT-RAM or STT-MRAM) is a non-volatile memory with near-zero
Spin-transfer_torque
Israeli semiconductor company
develops Resistive Random-Access Memory (ReRAM or RRAM) technologies. Resistive Random-Access Memory is a specialized form of non-volatile memory (NVM) for
Weebit_Nano
Component that stores information
meaning random-access memory, although some older forms of computer memory, such as drum memory, are not random-access. Archaic synonyms for main memory include
Computer_memory
Clara, California. Crossbar develops a class of non-volatile resistive random-access memory (ReRAM) technology. Crossbar was founded in 2010, by George
Crossbar,_Inc.
Novel computer memory type
Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM (ovonic unified memory) and C-RAM or CRAM (chalcogenide RAM)) is a type of non-volatile random-access
Phase-change_memory
Novel type of computer memory
Ferroelectric RAM (Fe-RAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric
Ferroelectric_RAM
Proposed form of computer storage
programmable metallization cell (PMC) resistive random-access memory (RRAM) nano-RAM memristor-based memory Since each memory has its limitations, none of these
Universal_memory
Type of computer memory introduced 2014
Data Rate 4 Synchronous Dynamic Random-Access Memory (DDR4 SDRAM) is a type of synchronous dynamic random-access memory with a high-bandwidth ("double
DDR4_SDRAM
Discontinued computer memory type
electrical resistance and to be bit addressable. Similarities to the resistive random-access memory under development by Crossbar Inc. have been noted, but 3D XPoint
3D_XPoint
Overview of and topical guide to semiconductors
Read-only memory EEPROM Flash memory NAND flash Magnetoresistive random-access memory Ferroelectric RAM Phase-change memory Resistive random-access memory Integrated
Outline_of_semiconductors
Topics referred to by the same term
Crossbar (computer hardware manufacturer), a company manufacturing resistive random-access memory Crossbar (film), a 1979 Canadian television film This disambiguation
Crossbar
Nonlinear two-terminal fundamental circuit element
aims at a real physical modeling of non-volatile memory elements, e.g., resistive random-access memory devices, one has to keep an eye on the aforementioned
Memristor
Part of computer memory
memory, which consists of metal–oxide–semiconductor (MOS) memory cells. Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops
Memory_cell_(computing)
British physicist
metal-oxide thin films for applications in Resistive random-access memory (RRAM), an emerging non-volatile memory storage technology. She was awarded her
Monifa_Phillips
British electronics engineer (born 1981)
technologies. He has been involved in developing emerging metal-oxide resistive random-access memory technologies with applications in embedded electronics. and
Themis_Prodromakis
Action performed by computers
may read information off a floppy disk and store it temporarily in random-access memory before it is written to the hard drive to be processed at a future
Reading_(computer)
American semiconductor manufacturer
with Israeli semiconductor IP company Weebit Nano to offer resistive random-access memory (ReRAM) on their 130 nm process. https://www.eetimes
SkyWater_Technology
South Korean public research university
technology Gweng-su Rhim, developed next generation Transparent Resistive Random Access Memory (TRRAM) Seung-man Yang, developed new photonics crystal-based
KAIST
Novel computer memory type
NRAM acts as a resistive non-volatile random-access memory (RAM) and can be placed in two or more resistive modes depending on the resistive state of the
Nano-RAM
Novel type of computer memory
Electrochemical Random-Access Memory (ECRAM) is a type of non-volatile memory (NVM) with multiple levels per cell (MLC) designed for deep learning analog
Electrochemical_RAM
Recording of data on a magnetizable medium
either sequential access memory or random access memory, although in some cases the distinction is not perfectly clear. The access time can be defined
Magnetic_storage
a capacitive touchscreen. Transparent resistive random access memory Transparent resistive random access memory (TRRAM) is the world's first transparent
List of South Korean inventions and discoveries
List_of_South_Korean_inventions_and_discoveries
Method of measuring the microscopic topography of a material
"Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures". Applied Physics Letters. 100 (12):
Conductive atomic force microscopy
Conductive_atomic_force_microscopy
Ion
Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory". Materials. 8 (10): 7191–7198. Bibcode:2015Mate....8.7191L
Oxonickelates
Novel computer memory type
universal memory device applicable to a wide variety of roles. Other contenders included magnetoresistive random-access memory (MRAM), phase-change memory (PCRAM)
Racetrack_memory
Non-volatile memory technology
"electrolytic memory". PMC is a two terminal resistive-memory technology developed at Arizona State University. PMC is an electrochemical metallization memory that
Programmable metallization cell
Programmable_metallization_cell
Earliest electronic computer design
vacuum tubes was the incorporation of large memories that could store thousands of bits of data and randomly access them at high speeds. That, in turn, allowed
Vacuum-tube_computer
Type of computer memory
recognition unit. Unlike standard computer memory, random-access memory (RAM), in which the user supplies a memory address and the RAM returns the data word
Content-addressable_memory
Class of attack on cryptographic systems
intelligence service, or added later by anyone with physical access. CPU chips with built-in hardware random number generators can be replaced by compatible chips
Random number generator attack
Random_number_generator_attack
Institute of Physics. His work focuses on developing metal-oxide Resistive Random-Access Memory technologies and related applications and is leading an interdisciplinary
Regius Professor of Engineering (Edinburgh)
Regius_Professor_of_Engineering_(Edinburgh)
Refractory compound of boron and nitrogen with formula BN
substrate material. It can also be used as a dielectric in resistive random access memories. Hexagonal BN is used in xerographic process and laser printers
Boron_nitride
2015 password-based key derivation function
time–memory trade-off (TMTO) attacks, but introduces possible side-channel attacks. Argon2i is optimized to resist side-channel attacks. It accesses the
Argon2
Greek electrical engineer
(2012). "Resistive switching behavior in diamond-like carbon films grown by pulsed laser deposition for resistance switching random access memory application"
Evangelos_S._Eleftheriou
Early form of computer memory
Williams and Tom Kilburn, is an early form of computer memory. It was the first random-access digital storage device, and was used successfully in several
Williams_tube
Sinanoglu, and R. Karri, "Sneak Path Testing of Crossbar-based Resistive Random Access Memories," IEEE Transactions on Nanotechnology, vol.12, no.3, pp. 413–426
Ramesh_Karri
Computer instruction for returning hardware-generated random numbers
Analysis of Intel's Ivy Bridge Digital Random Number Generator. RDSEED is similar to RDRAND and provides lower-level access to the entropy-generating hardware
RDRAND
Type of field-effect transistor
Transistor Memories: Device Physics and Applications", Topics in Applied Physics, no. 131, Springer Ishiwara, Hiroshi (2012), "FeFET and ferroelectric random access
Fe_FET
termed Random Access Storage but today known as secondary storage, less expensive and slower than main memory (then typically drums and later core memory) but
History_of_hard_disk_drives
Germanium-antimony-tellurium material
distinguishes it from other next generation non-volatile memory like magnetic random access memory (MRAM) is the unique scaling advantage of having better
GeSbTe
Central computer component that executes instructions
uncommon, and is generally on dynamic random-access memory (DRAM), rather than on static random-access memory (SRAM), on a separate die or chip. That
Central_processing_unit
Smartphone model
(CMOS) system-on-a-chip (SoC) from NEC, MOS random-access memory (RAM) chips from Sony and Hitachi, flash memory (floating-gate MOS) chips from Intel and
IBM_Simon
Uses of capacitors in daily life
connect one circuit segment to another. Capacitors are used by Dynamic Random Access Memory (DRAM) devices to represent binary information as bits. A capacitor
Applications_of_capacitors
Cryptographic attack
designed to resist it.[citation needed] Tradeoff attacks on symmetric cryptosystems date back to 1980, when Martin Hellman suggested a time/memory tradeoff
Time/memory/data tradeoff attack
Time/memory/data_tradeoff_attack
Electro-mechanical data storage device
which read and write data to the platter surfaces. Data is accessed in a random-access manner, meaning that individual blocks of data can be stored
Hard_disk_drive
Any attack based on information gained from the implementation of a computer system
Cryptographic code designed to resist cache attacks attempts to use memory in only a predictable fashion (like accessing only the input, outputs and program
Side-channel_attack
Single chip microcontroller series by Intel
provides many functions (central processing unit (CPU), random-access memory (RAM), read-only memory (ROM), input/output (I/O) ports, serial port, interrupt
Intel_MCS-51
Resistance of a password to being guessed
crack, for a given length and character set, are random character strings; if long enough they resist brute force attacks (because there are many characters)
Password_strength
Manufacturing styles of an electronic device
commonly manufactured capacitors are integrated into dynamic random-access memory, flash memory, and other device chips, this article covers the discrete
Capacitor_types
Internet appliance by Nokia
and USB 2.0 OTG high-speed. Display & resolution: pressure-sensitive resistive touch-screen LCD 4.1 inches 800×480 pixels at 225 dpi (the same as the
Nokia_N800
Imperfect recall of a crime or other dramatic event
encoding of the memory. Traumatic events may cause memory to be repressed out of conscious awareness. An inability to access the repressed memory is argued
Eyewitness_memory
Recording device
even months, of unattended recording. This memory may be battery-backed static random access memory, flash memory, or EEPROM. Earlier data loggers used magnetic
Data_logger
High-capacity electrochemical capacitor
power delivery. Smaller units are used as power backup for static random-access memory (SRAM). The electrochemical charge storage mechanisms in solid media
Supercapacitor
Season of television series
competition: the reigning HOH, the nominees, and other players selected by random draw. The winner of the POV competition has the right to either revoke the
Big Brother 27 (American season)
Big_Brother_27_(American_season)
Security vulnerability
evil maid (i.e., attacker of an unattended device) attack gaining full access to a computer's information in about five minutes, and may affect millions
Thunderspy
Text by Walter Benjamin, 1932 to 1938
Proust's involuntary memory lay not in the randomness of the images (an aspect he criticized), but in the after-effect. Memory gives us an image of ourselves
Berlin_Childhood_around_1900
Metastable phase of tungsten
current, and this leads to potential applications in magnetoresistive random access memory devices. β-W was first observed by Hartmann et al. in 1931 as part
Beta-tungsten
Potential transistor-like device
sustain. It is one of the technologies being explored for magnetic random access memory (MRAM). Because of its high potential for practical use in the computer
Spin_transistor
1969 science fiction novel by Frank Herbert
gives birth to twins who, like Alia, have full access to both their male and female ancestral memories. The son is a total surprise for Paul, who had
Dune_Messiah
Type of cipher
side-channel attacks, such as branch prediction and input-dependent memory accesses that might leak secret data via the cache state or the execution time
Block_cipher
Lithography using 13.5 nm UV light
stochastic resist loss, from secondary electrons. The randomness of the number of secondary electrons is itself a source of stochastic behavior in EUV resist images
EUV_lithography
Chemical compound
such as CDs, DVDs, and Blu-ray and may replace dynamic and flash random access memories. In 1987, Yamada et al. explored the phase changing properties of
Germanium_telluride
Family of instruction set architectures
regardless of whether the other operand is ST(x) or a memory operand. However, random access to the stack registers can be obtained through an instruction
X86
Integrated circuit customized for a specific task
by both metal and polysilicon layers. Some base dies also include random-access memory (RAM) elements. In the mid-1980s, a designer would choose an ASIC
Application-specific integrated circuit
Application-specific_integrated_circuit
Fictional character from Baldur's Gate
When Astarion was initially encountered during Baldur's Gate 3's early access period, he quickly became a fan-favorite. His prominence on the game's box
Astarion
Type of consensus algorithm
different from memory-hard functions in that the bottleneck is not in the number of memory access events, but in the amount of memory required. After
Proof_of_space
2018 video game
narrative elements within the randomly generated world. Instead, Compulsion opted to open the game to an early access release in a playable state on
We_Happy_Few
Condition of not having enough sleep
which requires the subject to press a button in response to a light at random intervals. Failure to press the button in response to the stimulus (light)
Sleep_deprivation
Family of digital circuits
first PMOS static random-access memory with a capacity of 256 bit, the Intel 1101, in 1969. The 1024-bit dynamic random-access memory Intel 1103 followed
PMOS_logic
Free and open-source anonymity network based on onion routing
worldwide, as well as by millions of users who route their internet traffic via random paths through these relays. This technique is called onion routing. Using
Tor_(network)
Micro-electronic component
microcontrollers, this is not necessary. Memory technologies for SoCs include read-only memory (ROM), random-access memory (RAM), Electrically Erasable Programmable
System_on_a_chip
Canadian musician (born 1972)
won a Grammy award for his work on Daft Punk's 2013 studio album Random Access Memories. Gonzales is the younger brother of film composer Christophe Beck
Chilly_Gonzales
Bumblebee and guns down Jetfire, but is stopped by Optimus Prime. Teletraan 1 randomly reactivates more Autobots and Decepticons, including Skywarp, Ratchet,
List of Energon Universe story arcs
List_of_Energon_Universe_story_arcs
Experience of thoughts not remaining on a single topic for a long period of time
memory capacity scores resisted looking at the flashing visual cue better than participants with lower working memory capacity. Higher working memory
Mind-wandering
Technology for maintenance of file systems
solid-state drive (SSD) is based on flash memory with no moving parts, so random access of a file fragment on flash memory does not suffer this delay, making
Defragmentation
American social networking service
of notes. Twitter then expanded access to notes made by the Birdwatch contributors in March 2022, giving a randomized set of US users the ability to view
X_(social_network)
Season of television series
pleasant memory; Noelle, however, has none. She practices and, on the night before the full moon, Asta suggests that she cast the spell randomly. The spell
Black_Clover_season_1
Technique used to increase the number of structures a microchip may contain
development of 30-nm class NAND flash memory. Multi-patterning has since been widely adopted by NAND flash and random-access memory manufacturers worldwide. There
Multiple_patterning
2014 video game
"Wolfenstein: The New Order Walkthrough - U-Boat - Access the Secret Vault". Prima Games. Random House. Archived from the original on 6 September 2014
Wolfenstein:_The_New_Order
American electrical engineer (born 1984)
transistors to address the growing difficulty with embedded Static random-access memory in modern Semiconductor process technology. SOT-MRAM for SRAM replacement
Sasikanth_Manipatruni
1950–1953 conflict on the Korean Peninsula
November 2017. Cumings, Bruce (27 July 2010). The Korean War: A History. Random House. ISBN 9780679603788. Retrieved 11 November 2017 – via Google Books
Korean_War
Global conflict from 1939 to 1945
of War: The World and United States Foreign Policy, 1943–1945. New York: Random House. ISBN 978-0-679-72757-6. Kramer, Mark (2014). "The Soviet Bloc and
World_War_II
2001 terror attacks in the U.S.
2016. Ibrahim, Raymond; bin Laden, Osama (2007). The Al Qaeda reader. Random House. ISBN 978-0-385-51655-6. Retrieved March 18, 2016. Javorsek, Daniel
September_11_attacks
Gematsu. Retrieved April 25, 2025. Romano, Sal (May 15, 2025). "Lost in Random: The Eternal Die launches June 17". Gematsu. Retrieved May 16, 2025. Phillips
List of video games released in 2025
List_of_video_games_released_in_2025
"Judge LaRue" proceeds to terrorize and/or kill jurors and litigants at random...including a divorced couple who were there for a custody hearing. After
List of Walker, Texas Ranger episodes
List_of_Walker,_Texas_Ranger_episodes
German composer and pianist (1833–1897)
1525/ncm.2001.24.3.268. Swafford, Jan (2012). Johannes Brahms: A Biography. Random House Digital, Inc. ISBN 978-0-307-80989-6. Taruskin, Richard (2010). Music
Johannes_Brahms
British television series
vague memories. After being released from prison, Hamish's father had taken on a false identity and married Hamish's adoptive mother to gain access to his
Shakespeare & Hathaway: Private Investigators
Shakespeare_&_Hathaway:_Private_Investigators
1987 studio album by U2
describes how Bono felt at Carroll's funeral. The album is dedicated to his memory. The group's religious faith was a source of inspiration for many lyrics
The_Joshua_Tree
Observation on the growth of integrated circuit capacity
Sah and Frank Wanlass at Fairchild Semiconductor in 1963. Dynamic random-access memory (DRAM): DRAM was developed by Robert H. Dennard at IBM in 1967. Chemically
Moore's_law
American novelist and law professor
received the same honor from the same school. His favorite high school memory involves John Pauley and Regan Pourchot. He attended the University of Illinois
Paul_J._Heald
2025 studio album by FKA Twigs
amazing East Bloc techno warehouse raves, techno kids, I just couldn't resist." North West features as a rapper on the track "Childlike Things", performing
Eusexua
published 6 July 2018, accessed 25 November 2022 Wikimedia Foundation, Eugène Tisserant#Second Vatican Council and beyond, accessed on 14 October 2025 Twelfth
List_of_Latin_phrases_(full)
code storage, embedded logic, embedded memory, main memory Memory registers – shift register Random-access memory (RAM) – static RAM (SRAM), dynamic RAM
List_of_MOSFET_applications
American multinational technology company
innovations, including the Automated Teller Machine (ATM), Dynamic Random-Access Memory (DRAM), the floppy disk, Generalized Markup Language, the hard disk
IBM
Fictional character from the novel Moby-Dick
dim, random way, explain myself I must, else all these chapters might be naught.'" This Ishmael must not be equated with Melville himself: "we resist any
Ishmael_(Moby-Dick)
mobster Victor Drath, Michelle does not object to spending the night with random strangers who turn up wounded on her doorstep. Her motivations occasionally
List of The Transformers characters
List_of_The_Transformers_characters
Robert A. (2005). Dying to Win: The Strategic Logic of Suicide Terrorism. Random House. p. 55. ISBN 978-1400063178. The New York Times, "Car Bomb in Beqaa
List of extrajudicial killings and political violence in Lebanon
List_of_extrajudicial_killings_and_political_violence_in_Lebanon
2007 tablet computer from Nokia
screen – the central point from which all applications and settings were accessed. The Home screen was divided into areas for launching applications, a menu
Nokia_N810
Phenomenon involving the change of conductivity in metallic layers
devices. GMR multilayer structures are also used in magnetoresistive random-access memory (MRAM) as cells that store one bit of information. In literature
Giant_magnetoresistance
travel, tourism, insurance
RESISTIVE RANDOM-ACCESS-MEMORY
RESISTIVE RANDOM-ACCESS-MEMORY
RESISTIVE RANDOM-ACCESS-MEMORY
RESISTIVE RANDOM-ACCESS-MEMORY
RESISTIVE RANDOM-ACCESS-MEMORY
RESISTIVE RANDOM-ACCESS-MEMORY
RESISTIVE RANDOM-ACCESS-MEMORY
RESISTIVE RANDOM-ACCESS-MEMORY
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