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Four-layer solid-state current-controlling device
A silicon controlled rectifier or semiconductor controlled rectifier (SCR) is a four-layer solid-state current-controlling device. The name "silicon controlled
Silicon_controlled_rectifier
Type of solid-state switch
some other means), or through the control-gate signal on newer types. Some sources define "silicon-controlled rectifier" (SCR) and "thyristor" as synonymous
Thyristor
Type of electrical rectifier with a liquid cathode
A mercury-arc valve or mercury-vapor rectifier or (UK) mercury-arc rectifier is a type of electrical rectifier used for converting high-voltage or high-current
Mercury-arc_valve
Electrical device that converts AC to DC
copper and selenium oxide plates, semiconductor diodes, silicon-controlled rectifiers and other silicon-based semiconductor switches. Historically, even synchronous
Rectifier
Two-terminal electronic component
sequence developed by Mullard, a UK company Rectifier Transistor Thyristor or silicon controlled rectifier (SCR) TRIAC DIAC Varistor In optics, an equivalent
Diode
Solid-state semiconductor device
small voltage and current can control a much larger voltage and current) and are related to silicon controlled rectifiers (SCRs). TRIACs differ from SCRs
TRIAC
Semiconductor diode
cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky
Schottky_diode
Discrete device in an electronic system
active terminals. Thyristors Silicon-controlled rectifier (SCR) – passes current only after triggered by a sufficient control voltage on its gate TRIAC (TRIode
Electronic_component
Early type of semiconductor rectifier
inexpensive high voltage silicon rectifiers, this technology has fallen into disuse. Metal rectifiers have been replaced by silicon diodes in most devices
Metal_rectifier
Pictogram used to represent various electrical and electronic devices or functions
Emitting Diode) Photodiode Tunnel diode Varicap Shockley diode SCR (Silicon Controlled Rectifier) Diac (may be a varistor in older schematics) Constant-current
Electronic_symbol
Gas-filled tube, electrical switch, rectifier
type of gas-filled tube used as a high-power electrical switch and controlled rectifier. Thyratrons can handle much greater currents than similar hard-vacuum
Thyratron
Diode that emits light from an organic compound
(AMOLED) control scheme. In the PMOLED scheme, each row and line in the display is controlled sequentially, one by one, whereas AMOLED control uses a thin-film
OLED
Semiconductor light source
allowing them to work efficiently with mains voltages. Often a simple rectifier and capacitive current limiting are employed to create a low-cost replacement
Light-emitting_diode
Type of transistor
kilohertz). It is widely used in the triggering circuits for silicon controlled rectifiers. In the 1960s, the low cost per unit, combined with its unique
Unijunction_transistor
Type of diode
voltage-controlled capacitors. They are commonly used in voltage-controlled oscillators, parametric amplifiers, and frequency multipliers. Voltage-controlled
Varicap
Electronic component that exploits the electronic properties of semiconductor materials
Field-effect transistor Insulated-gate bipolar transistor (IGBT) Silicon-controlled rectifier Thyristor TRIAC Unijunction transistor Four-terminal devices:
Semiconductor_device
Electronic circuit formed on a small, flat piece of semiconductor material
onto a thin, flat piece ("chip") of semiconductor material, most commonly silicon. Integrated circuits are integral to a wide variety of electronic devices
Integrated_circuit
Electronic component
sensor can be a photoresistor, a photodiode, a phototransistor, a silicon-controlled rectifier (SCR) or a triac. Since LEDs can sense light in addition to emitting
Opto-isolator
Sensors of light or other electromagnetic energy
grids. The semiconductor layer is typically made of materials such as silicon (Si), gallium arsenide (GaAs), indium phosphide (InP) or antimony selenide
Photodetector
Array of logic gates that are reprogrammable
(three or four) active FPGA dies side by side on a silicon interposer – a single piece of silicon that carries passive interconnect. The multi-die construction
Field-programmable_gate_array
Solid-state electrically operated switch also used as an amplifier
the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of field-effect transistor that is fabricated by the controlled oxidation of a semiconductor
Transistor
Electronic component
unidirectional or bidirectional. A unidirectional device operates as a rectifier in the forward direction like any other avalanche diode, but is made and
Transient-voltage-suppression diode
Transient-voltage-suppression_diode
Type of vacuum tube; early radio detector
the opposite direction. The thermionic diode was later widely used as a rectifier — a device that converts alternating current (AC) into direct current
Fleming_valve
Failure mode in MOSFET circuits
the NMOS and the PMOS transistors. This breaks the parasitic silicon-controlled rectifier (SCR) structure between these transistors. Such parts are important
Latch-up
Form of digital logic family in integrated circuits
the time. The introduction of transistors with gates of polycrystalline silicon (that became the de facto standard from the mid-1970s to early 2000s) was
Depletion-load_NMOS_logic
Temperature control system
are often broadly classified as thermostatically controlled loads (TCLs). Thermostatically controlled loads comprise roughly 50% of the overall electricity
Thermostat
Active electronic circuit controlling the current through a load
1971 control power circuits with no moving parts, instead using a semiconductor device to perform switching—often a silicon-controlled rectifier or triac)
Electronic_switch
Electronic component
blowing a fuse or causing failure of rectifier diodes. For example, in older equipment, this may cause arcing in rectifier tubes. They can be restored before
Capacitor
American multinational technology company
2013 RefuSol (Metzingen, Germany) acquired 2014 Power control modules (silicon-controlled rectifier controllers) section of AEG Power Solutions, Warstein-Belecke
Advanced_Energy
Type of transistor
for controlled diffusion", issued 1957-08-13 Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal
Field-effect_transistor
Type of diode
as anode and cathode but as A1 and A2 or main terminal MT1 and MT2. A silicon diode for alternating current (SIDAC) is a less commonly used device, electrically
DIAC
Type of field-effect transistor
field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines
MOSFET
Electronic oscillator circuit
crystal oscillator OCVCXO — oven-controlled voltage-controlled crystal oscillator OCXO — Oven-controlled crystal oscillator RbXO — Rubidium crystal
Crystal_oscillator
Diode that allows current to flow in the reverse direction at a specific voltage
in similar ways and both effects are present in diodes of this type. In silicon diodes up to about 5.6 volts, the Zener effect is the predominant effect
Zener_diode
Optical diode invented by Jun-Ichi Nishizawa
p–n diode. The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes it suitable for attenuators
PIN_diode
Field-effect transistor device
polycrystalline silicon were (and still are) used as the semiconductor layer. However, because of the low mobility of amorphous silicon and the large device-to-device
Thin-film_transistor
Nonlinear two-terminal fundamental circuit element
change of x1 is current-controlled (spin torque is due to a high current density), whereas the change of x2 is voltage-controlled (the drift of oxygen vacancies
Memristor
Practical physics application
electrons dissipate energy in the form of heat within the crystalline silicon and germanium diodes, but in gallium arsenide phosphide (GaAsP) and gallium
Light-emitting_diode_physics
Diode that works using quantum tunneling
diodes are called back diodes (or backward diodes) and can act as fast rectifiers with zero offset voltage and extreme linearity for power signals (they
Tunnel_diode
Electronic component
varistors were constructed by connecting two rectifiers, such as the copper-oxide or germanium-oxide rectifier in antiparallel configuration. At low voltage
Varistor
Device that controls current between electrodes
turn-on pulse and full conduction; they behave much like modern silicon-controlled rectifiers, also called thyristors due to their functional similarity to
Vacuum_tube
Type of MOSFET where the gate is electrically isolated
for controlled diffusion", issued 1957-08-13 Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal
Floating-gate_MOSFET
Transistor that uses both electrons and holes as charge carriers
Bipolar transistors can be considered voltage-controlled devices (fundamentally the collector current is controlled by the base–emitter voltage; the base current
Bipolar_junction_transistor
bi-directional diodes that switch AC voltages and trigger TRIACS or silicon-controlled rectifiers (SCRs). Except for a small leakage current, DIACS do not conduct
Quadrac
Device that changes direct current (DC) to alternating current (AC)
applications, it was the 1957 introduction of the thyristor or silicon-controlled rectifier (SCR) that initiated the transition to solid-state inverter circuits
Power_inverter
Semiconductor device
controllable and can be turned On and Off by their gate lead. It was invented by General Electric. Normal thyristors (silicon-controlled rectifiers)
Gate_turn-off_thyristor
Early form of computer memory
Metal-oxide varistor (MOV) Organic semiconductor Photodetector Silicon controlled rectifier (SCR) Solaristor Static induction thyristor (SITh) Thyristor
Williams_tube
Type of semiconductor
designer some control over the operating point of the PUT. In construction, the programmable transistor is similar to the silicon controlled rectifier (SCR).
Programmable unijunction transistor
Programmable_unijunction_transistor
American technology company
germanium rectifiers in November 1954 and introducing the first silicon-based rectifier in September 1959. The company expanded its development into discrete
International_Rectifier
Four layer semiconductor diode
transistors in the OFF state. Common applications: Trigger switch for silicon controlled rectifier Relaxation oscillator / sawtooth oscillator Niche applications:
Shockley_diode
Magnetic core on which the windings of electric transformers and inductors are formed
Metal-oxide varistor (MOV) Organic semiconductor Photodetector Silicon controlled rectifier (SCR) Solaristor Static induction thyristor (SITh) Thyristor
Ferrite_core
Type of resistor whose resistance varies with temperature
temperature compensation, medical equipment temperature control, and industrial automation, silicon PTC thermistors display a nearly linear positive temperature
Thermistor
Power amplifier
over discretely-implemented gate-drive solutions. In 1989, International Rectifier (IR) introduced the first monolithic HVIC gate driver product, the high-voltage
Gate_driver
Central computer component that executes instructions
in applications that required low power. Following the development of silicon-gate MOS technology by Federico Faggin at Fairchild Semiconductor in 1968
Central_processing_unit
Electrical connector designed to work at radio frequencies
Metal-oxide varistor (MOV) Organic semiconductor Photodetector Silicon controlled rectifier (SCR) Solaristor Static induction thyristor (SITh) Thyristor
RF_connector
Form of digital logic family in integrated circuits
gates made of polycrystalline silicon, a technology first developed by Federico Faggin at Fairchild Semiconductor. These silicon gates are still used in most
NMOS_logic
Electronic circuits that utilize digital signals
for controlled diffusion", issued 1957-08-13 Frosch, C. J.; Derick, L (1957). "Surface Protection and Selective Masking during Diffusion in Silicon". Journal
Digital_electronics
Power semiconductor through-hole package
components include discrete semiconductors such as transistors and silicon-controlled rectifiers, as well as integrated circuits. The TO-220 package is a "power
TO-220
Vacuum tube which generates high-frequency radio waves
Metal-oxide varistor (MOV) Organic semiconductor Photodetector Silicon controlled rectifier (SCR) Solaristor Static induction thyristor (SITh) Thyristor
Gyrotron
Multi-transistor electronics configuration
one VBE (about 0.65 V in silicon) higher than a single transistor saturation voltage, which is typically 0.1 - 0.2 V in silicon. For equal collector currents
Darlington_transistor
Type of display device
process of contact printing: Polydimethylsiloxane (PDMS) is molded using a silicon master. Top side of resulting PDMS stamp is coated with a thin film of
Quantum_dot_display
Sources of electricity or hydrogen via electrolysis
fuel. Incoming sunlight excites free electrons near the surface of the silicon electrode. These electrons flow through wires to the stainless steel electrode
Photoelectrochemical_cell
Metal-oxide varistor (MOV) Organic semiconductor Photodetector Silicon controlled rectifier (SCR) Solaristor Static induction thyristor (SITh) Thyristor
List_of_RF_connector_types
Gas-filled tube used as a rectifier
An ignitron is a type of gas-filled tube used as a controlled rectifier and dating from the 1930s. Invented by Joseph Slepian while employed by Westinghouse
Ignitron
Technology of power electronics
is applied and have no external control of the start of conduction. Power devices such as silicon-controlled rectifiers and thyristors (as well as the
Power_electronics
Transistor using different semiconductor materials
Materials used for the substrate include silicon, gallium arsenide, and indium phosphide, while silicon / silicon-germanium alloys, aluminum gallium arsenide
Heterojunction bipolar transistor
Heterojunction_bipolar_transistor
Integrated circuit customized for a specific task
reducing manufacturing time) and pre-characterization of what is on the silicon (thus reducing design cycle time). Definition from Foundations of Embedded
Application-specific integrated circuit
Application-specific_integrated_circuit
Connector used to connect to mains power
to the 240 V AC mains until circa 1969, and thereafter from in-house rectifiers. They were also used in the Ministry of Defence Main Building inside circuits
AC_power_plugs_and_sockets
Type of electrical current converter
to provide continuous current, in much the same way a capacitor in a rectifier filter provides continuous voltage. If this inductor is too small or below
Ćuk_converter
System designed to maintain a constant voltage
regulators. Regulators powered from AC power circuits can use silicon controlled rectifiers (SCRs) as the series device. Whenever the output voltage is
Voltage_regulator
Location identifier for a circuit component
Programmable logic controller PU: Pickup RY, RLA: Relay SCR: Silicon-controlled rectifier SUS: Silicon unilateral switch SW: Switch TFT: Thin-film transistor
Reference_designator
Early and obsolete type of computer memory
Metal-oxide varistor (MOV) Organic semiconductor Photodetector Silicon controlled rectifier (SCR) Solaristor Static induction thyristor (SITh) Thyristor
Selectron_tube
Highly sensitive semiconductor electronic device
in 1952. However, study of avalanche breakdown, micro-plasma defects in silicon and germanium and the investigation of optical detection using p-n junctions
Avalanche_photodiode
Family of digital circuits
resulting in the release of the analogue multiplexer 3708 as the first silicon-gate integrated circuit. The self-aligned gate process allowed tighter
PMOS_logic
Type of solid state switch
S.; Gray, P. V.; Love, R. P.; Zommer, N. (1982). "The insulated gate rectifier (IGR): A new power switching device". 1982 International Electron Devices
Insulated-gate bipolar transistor
Insulated-gate_bipolar_transistor
Devices that measure magnetic field strength using the Hall effect
technology was unsuited; it was only with the development of the low-cost silicon chip-based integrated circuit (IC) micro-technology that the Hall effect
Hall_effect_sensor
Electronic device/component that increases the strength of a signal
transfer function include:[citation needed] a device like a silicon controlled rectifier or a transistor used as a switch may be employed to turn either
Amplifier
Device measuring ionizing radiation
semiconductor detector is a device that uses a semiconductor (usually silicon or germanium) to measure the effect of incident charged particles or photons
Semiconductor_detector
Assembly of electrodes at either end of an insulated tube filled with gas
cathode rectifier with anode current controlled by magnetic field Phanotron, a rectifier Plomatron, a grid-controlled mercury-arc rectifier Strobotron
Gas-filled_tube
Device used in television cameras
in the RCA TK-42 color camera. Si-vidicons, silicon vidicons or Epicons, Vidicons using arrays of silicon diodes for the target, were introduced in 1969
Video_camera_tube
Type of non-planar transistor
generic name "FinFETs" because the source/drain region forms fins on the silicon surface. The FinFET devices exhibit significantly faster switching times
Fin_field-effect_transistor
Topics referred to by the same term
complement control protein (CCP) repeat Signal Corps Radio or Set, Complete, Radio, U.S. Army Signal Corps designation Silicon controlled rectifier, a type
SCR
First successful type of transistor, developed in 1947
transistor did still remain in production until the 1960s, by which time the silicon planar transistor was dominating the market. While point-contact transistors
Point-contact_transistor
Type of semiconductor laser diode
production process is more labor and material intensive, the yield can be controlled to a more predictable and higher outcome. The laser resonator consists
Vertical-cavity surface-emitting laser
Vertical-cavity_surface-emitting_laser
Passive electronic component providing electrical resistance
which the sputtering is performed can be controlled, the thickness of the thin film can be accurately controlled. The type of material also varies, consisting
Resistor
Vacuum tube used to generate microwaves
Bernard Epsztein and O-type by Rudolf Kompfner. The M-type BWO is a voltage-controlled non-resonant extrapolation of magnetron interaction. Both types are tunable
Backward-wave_oscillator
Device for producing coherent EM waves in the sub-visible spectrum
(H2O), hydroxyl radicals (•OH), methanol (CH3OH), formaldehyde (HCHO), silicon monoxide (SiO), and carbodiimide (HNCNH). Water molecules in star-forming
Maser
Technology for constructing integrated circuits
predeposition, were able to manufacture silicon transistors. They showed that silicon dioxide protected silicon wafers from dopants diffusing into the
CMOS
Electronic switching device
industrial automation settings. In alternating current (AC) circuits, silicon-controlled rectifier (SCR) and triac relays inherently switch off at the points of
Solid-state_relay
Vacuum tube used to display images
beam current and vice versa respectively. The high voltage regulator and rectifier vacuum tubes in some old CRT TV sets may also emit x-rays. The electron
Cathode_ray_tube
Device used to suppress some phenomenon
forward diode drop. Transient-voltage-suppression diodes are like silicon controlled rectifiers (SCRs) which trigger from overvoltage then clamp like Darlington
Snubber
DC linear voltage regulator
power loss in the control circuit. Because the power control element is an inverter, another inverting amplifier is required to control it, increasing circuit
Low-dropout_regulator
Magnetic effect in insulators between ferromagnets
Metal-oxide varistor (MOV) Organic semiconductor Photodetector Silicon controlled rectifier (SCR) Solaristor Static induction thyristor (SITh) Thyristor
Tunnel_magnetoresistance
Type of diode
In electronics, an avalanche diode is a diode (made from silicon or other semiconductor) that is designed to experience avalanche breakdown at a specified
Avalanche_diode
Form of diode
In practical oscillators, an electronic resonator is usually added to control frequency in the form of a waveguide, microwave cavity, or YIG sphere.
Gunn_diode
Type of field-effect transistor
the graphene surface is more convenient to functionalize compared to silicon, leading to a wide range of developments in bioFETs. Chemical field-effect
ISFET
Electronic module
based on either thyristors, triodes for alternating current, silicon-controlled rectifiers or insulated-gate bipolar transistors, which converts a fixed
Voltage_controller
Capacitor whose capacitance can be changed
reactance, e.g. for impedance matching in antenna tuners. In mechanically controlled variable capacitors, the distance between the plates, or the amount of
Variable_capacitor
Electronic component
Metal-oxide varistor (MOV) Organic semiconductor Photodetector Silicon controlled rectifier (SCR) Solaristor Static induction thyristor (SITh) Thyristor
Resettable_fuse
Engineering device
dimmer based on a then-new solid state switching device called a silicon controlled rectifier or SCR. This small device allowed the dimmer to be installed
Dimmer
SILICON CONTROLLED-RECTIFIER
SILICON CONTROLLED-RECTIFIER
Girl/Female
British, English
Controller
Boy/Male
Tamil
Adhikara | அதிகராÂ
Principal, Controller
Adhikara | அதிகராÂ
Boy/Male
Hindu
Controller of destiny
Boy/Male
Hindu, Indian, Marathi
Controller of Power
Girl/Female
Greek
From Helicon.
Girl/Female
Greek
From Helicon.
Surname or Lastname
English
English : patronymic from Simon.
Boy/Male
Indian, Sanskrit
Highly Controlled
Boy/Male
Indian, Marathi
Controller of Power
Boy/Male
Hindu
Controller of time
Boy/Male
Tamil
Conquering, Self-controlled
Boy/Male
Tamil
Kalanabha | கலாநாபாÂ
Controller of time
Kalanabha | கலாநாபாÂ
Boy/Male
Arabic, Lebanese
Controller of Anger
Girl/Female
British, English, Greek
Sensible; Prudent; Self Controlled
Boy/Male
Hindu, Indian
Controller of Destiny
Boy/Male
Hindu
Conquering, Self-controlled
Boy/Male
Greek, Indian, Sanskrit
Self Controlled
Boy/Male
Gujarati, Hindu, Indian, Marathi
Winner; Self Controller
Boy/Male
Hindu, Indian, Kannada, Marathi, Oriya, Sanskrit, Telugu
Principal; Controller
Boy/Male
Tamil
Bhagyanandana | பாகà¯à®¯à®¨à®‚தாநா
Controller of destiny
SILICON CONTROLLED-RECTIFIER
SILICON CONTROLLED-RECTIFIER
Boy/Male
Scottish
Follower of Saint Columba.
Boy/Male
Tamil
Jyotish | ஜà¯à®¯à¯‹à®¤à®¿à®·
Light of the Sun, Astrologer, Luminous or bright or glowing
Boy/Male
Indian, Modern
Judgement
Boy/Male
Hindu, Indian, Malayalam, Marathi, Mythological, Oriya, Telugu
Lord Krishna
Girl/Female
French American English Latin
Brave.
Boy/Male
American, Anglo, Australian, British, English, Irish, Jamaican
From the White Island
Girl/Female
Greek
Brave.
Male
English
From an Old English place name ELLERY means "island of elder trees."Â
Boy/Male
Gujarati, Hindu, Indian, Kannada, Malayalam, Marathi, Sanskrit
The Universe
Male
Scottish
Scottish Gaelic form of Greek Michaēl, MICHEIL means "who is like God?"
SILICON CONTROLLED-RECTIFIER
SILICON CONTROLLED-RECTIFIER
SILICON CONTROLLED-RECTIFIER
SILICON CONTROLLED-RECTIFIER
SILICON CONTROLLED-RECTIFIER
n.
Silicon dioxide, SiO/. It constitutes ordinary quartz (also opal and tridymite), and is artifically prepared as a very fine, white, tasteless, inodorous powder.
v. t.
To convert into, or to impregnate with, silica, or with the compounds of silicon.
n.
An iron block, usually bolted to a ship's deck, for controlling the running out of a chain cable. The links of the cable tend to drop into hollows in the block, and thus hold fast until disengaged.
imp. & p. p.
of Control
n.
A silicate formed with the lowest proportion of silicic acid, or having but one atom of silicon in the molecule.
a.
Combined or impregnated with silicon or silica, especially the latter; as, silicified wood.
a.
Having a valence greater than one, as silicon.
n.
Capability of being controlled.
n.
One who, or that which, controls or restraines; one who has power or authority to regulate or control; one who governs.
a.
Combined or impregnated with silicon.
a.
Not governed or controlled.
n.
Silica, SiO2 as found in nature, constituting quarz, and most sands and sandstones. See Silica, and Silicic.
a.
Pertaining to, derived from, or resembling, silica; specifically, designating compounds of silicon; as, silicic acid.
n.
See Silicon.
n.
An officer appointed to keep a counter register of accounts, or to examine, rectify, or verify accounts.
n.
Capability of being controlled; controllableness.
n.
A nonmetalic element analogous to carbon. It always occurs combined in nature, and is artificially obtained in the free state, usually as a dark brown amorphous powder, or as a dark crystalline substance with a meetallic luster. Its oxide is silica, or common quartz, and in this form, or as silicates, it is, next to oxygen, the most abundant element of the earth's crust. Silicon is characteristically the element of the mineral kingdom, as carbon is of the organic world. Symbol Si. Atomic weight 28. Called also silicium.
n.
The office of a controller.
a.
Combined or impregnated with silicon or silica; as, silicated hydrogen; silicated rocks.