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Process necessary for BJT amplifiers to work correctly
Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as
Bipolar_transistor_biasing
Transistor that uses both electrons and holes as charge carriers
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor
Bipolar_junction_transistor
Transistor using different semiconductor materials
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and
Heterojunction bipolar transistor
Heterojunction_bipolar_transistor
Primitive type of bipolar junction transistor
The grown-junction transistor was the first type of bipolar junction transistor made. It was invented by William Shockley at Bell Labs on June 23, 1948
Grown-junction_transistor
Background operating conditions for electronics
which can be achieved using a biasing circuit. As an example of the need for careful biasing, consider a transistor amplifier. In linear amplifiers
Biasing
Type of solid state switch
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to
Insulated-gate bipolar transistor
Insulated-gate_bipolar_transistor
Solid-state electrically operated switch also used as an amplifier
switch is said to be on. The use of bipolar transistors for switching applications requires biasing the transistor so that it operates between its cut-off
Transistor
Class of digital circuits
Transistor–transistor logic (TTL) is a logic family built from bipolar junction transistors (BJTs). Its name signifies that transistors perform both the
Transistor–transistor_logic
Specialized bipolar transistor
A multiple-emitter transistor is a specialized bipolar transistor mostly used at the inputs of integrated circuit TTL NAND logic gates. Input signals are
Multiple-emitter_transistor
Type of field-effect transistor
with Lilienfeld. The first MOS transistor at Bell Labs was about 100 times slower than contemporary bipolar transistors and was initially seen as inferior
MOSFET
Mean amplitude of a waveform in the time domain
has biasing to set its operating point, the steady state current and voltage on the device when no signal is applied. In bipolar transistor biasing, for
DC_bias
Bipolar junction transistor operated in the avalanche breakdown region
An avalanche transistor is a bipolar junction transistor designed for operation in the region of its collector-current/collector-to-emitter voltage characteristics
Avalanche_transistor
Class of digital circuits
digital circuits built using resistors as the input network and bipolar junction transistors (BJTs) as switching devices. RTL is the earliest class of transistorized
Resistor–transistor_logic
Type of field-effect transistor
build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not need a biasing current. Electric charge
JFET
Unity gain amplifier with low output impedance
interference. Other unity gain buffer amplifiers include the bipolar junction transistor in common-collector configuration (called an emitter follower
Buffer_amplifier
Type of transistor
instead invented the point-contact transistor in 1947, which was followed by Shockley's bipolar junction transistor (BJT) in 1948. The first FET device
Field-effect_transistor
Multi-transistor electronics configuration
two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is
Darlington_transistor
Form of digital logic family in integrated circuits
memory replacing earlier bipolar and ferrite-core memory technologies in the 1970s. In the late 1960s, bipolar junction transistors were faster than (p-channel)
Depletion-load_NMOS_logic
Type of semiconductor
Unijunction Transistor Flasher". Archived from the original on 2018-03-05. "PUT - Programmable Unijunction Transistor - Working, Construction, Biasing - D&E
Programmable unijunction transistor
Programmable_unijunction_transistor
Two-terminal electronic component
Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential
Diode
Type of electronic amplifier using a bipolar junction transistor
common-emitter amplifier is one of three basic single-stage bipolar-junction-transistor (BJT) amplifier topologies, typically used as a voltage amplifier
Common_emitter
or VBE multiplier is a bipolar junction transistor circuit that serves as a voltage reference. It consists of one transistor and two resistors, and the
Rubber_diode
Simulation of physical processes taking place in an electronic device
circuits employing transistors, it is necessary to scientifically model the physical phenomena observed in their operation using transistor models. There exists
Transistor_model
Type of field-effect transistor
and as a power oscillator. High electron mobility transistor (HEMT) Heterojunction bipolar transistor Lepkowski, W.; Wilk, S.J.; Thornton, T.J. (2009)
MESFET
Class of electronic circuit
electronic circuits that reduce the storage time of a switching bipolar junction transistor (BJT) by applying a nonlinear negative feedback through various
Baker_clamp
Bipolar transistor configuration in electronics
two bipolar transistors, similar to a Darlington pair. In contrast to the Darlington arrangement, the Sziklai pair has one NPN and one PNP transistor, and
Sziklai_pair
MOSFET that can handle significant power levels
transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar
Power_MOSFET
{\displaystyle I_{\text{c}}} and I b {\displaystyle I_{\text{b}}} , of a bipolar transistor vs. the base–emitter voltage, V be {\displaystyle V_{\text{be}}}
Gummel_plot
inventions in history. Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). The principle
History_of_the_transistor
Diode that works using quantum tunneling
state-of-the-art, with better performance at high frequencies than any transistor-based front end. The tunnel diode can also be used as a low-noise microwave
Tunnel_diode
Semiconductor device
development of the GTO, and insulated-gate bipolar transistors (IGBTs), which are members of the transistor family. They are also used in the starter circuits
Gate_turn-off_thyristor
Technical specification
breakdown effect see Avalanche transistor Secondary breakdown is a failure mode in bipolar power transistors. In a power transistor with a large junction area
Safe_operating_area
Electronic component that exploits the electronic properties of semiconductor materials
diode Three-terminal devices: Bipolar transistor Darlington transistor Field-effect transistor Insulated-gate bipolar transistor (IGBT) Silicon-controlled
Semiconductor_device
Two-BJT transistor digital logic
is a class of digital circuits built with multiple collector bipolar junction transistors (BJT). When introduced it had speed comparable to TTL yet was
Integrated_injection_logic
Electronic amplifier circuit type
source terminal of the transistor serves as the input, the drain is the output, and the gate is connected to some DC biasing voltage (i.e. an AC ground)
Common_gate
Type of transistor amplifier
single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a voltage buffer. In this circuit, the base terminal of the transistor serves
Common_collector
Devices that measure magnetic field strength using the Hall effect
greater field strength to change states than bipolar switches require. The naming distinction between "bipolar" and "latch" may be a little arbitrary, for
Hall-effect_sensor
System designed to maintain a constant voltage
increase the load voltage again. Rv provides a bias current for both the Zener diode and the transistor. The current in the diode is minimal when the load
Voltage_regulator
Electronic amplification of a signal
transistor such that the signal changes in amplitude but not in shape. In order to achieve this with a bipolar transistor, the transistor is biased.
Faithful_amplification
Electronic circuit
the transistors operate in close thermal contact, the input transistors stabilize the idle current of the output pair, eliminating the need for a bias spreader
Diamond_buffer
An oxide thin-film transistor (oxide TFT) or metal oxide thin film transistor is a type of thin film transistor where the semiconductor is a metal oxide
Oxide_thin-film_transistor
collector-base junction of the pnp transistor. Carrier distribution in n-base is similar to that of saturation bipolar transistor and low saturation voltage of
MOS composite static induction thyristor
MOS_composite_static_induction_thyristor
Power amplifier
high-side, half-bridge, and three-phase configurations. In contrast to bipolar transistors, MOSFETs do not require continuous base current to remain in the
Gate_driver
Type of field-effect transistor
Si/SiGe. The advantages of HEMTs over other transistor architectures, like the bipolar junction transistor and the MOSFET, are the higher operating temperatures
High-electron-mobility transistor
High-electron-mobility_transistor
Electrical characteristic
constant collector/emitter voltage. The transconductance for the bipolar transistor can be expressed as g m = I C V T {\displaystyle g_{\mathrm {m} }={\frac
Transconductance
Type of electrical circuit
threshold voltage term in equation (9) to a percent or less requires biasing the transistors with the gate-source voltage exceeding the threshold by several
Wilson_current_mirror
Integrated circuit used for timer applications
The design was first marketed in 1972 by Signetics and used bipolar junction transistors. Since then, numerous companies have made the original timers
555_timer_IC
Device that prevents a transistor from saturating
Schottky-clamped transistor. Standard transistor–transistor logic (TTL) uses transistors as saturated switches. A saturated transistor is turned on hard
Schottky_transistor
Type of transistor
A unijunction transistor (UJT) is a three-lead electronic semiconductor device with only one junction. It acts exclusively as an electrically controlled
Unijunction_transistor
Model of the bipolar junction transistor
The Gummel–Poon model is a model of the bipolar junction transistor. It was first described in an article published by Hermann Gummel and H. C. Poon at
Gummel–Poon_model
Device performing a Boolean function
diode–transistor logic (DTL). Transistor–transistor logic (TTL) then supplanted DTL. As integrated circuits became more complex, bipolar transistors were
Logic_gate
Solid-state photodetector
can be biased at several operating regions depending on the applied voltage. For normal uni-directional diode operation, the forward biasing region and
Single-photon_avalanche_diode
Four-layer solid-state current-controlling device
etc. Bipolar junction transistor Crowbar (circuit) DIAC Gate turn-off thyristor High-voltage direct current Insulated-gate bipolar transistor Integrated
Silicon_controlled_rectifier
Type of transistor
The organic electrochemical transistor (OECT) is an organic electronic device which functions like a transistor. The current flowing through the device
Organic electrochemical transistor
Organic_electrochemical_transistor
Circuit designed to copy a current through one active device
current. The simplest bipolar current mirror (shown in Figure 1) implements this idea. It consists of two cascaded transistor stages acting accordingly
Current_mirror
Signal amplifier that doesn't significantly degrade the signal-noise ratio
Another design issue is the noise introduced by biasing networks. In communication circuits, biasing networks play a critical role in establishing stable
Low-noise_amplifier
Type of solid-state switch
thyristor can be understood in terms of a pair of tightly coupled bipolar junction transistors, arranged to cause a self-latching action. Thyristors have three
Thyristor
Power supply connections for integrated circuits
picture, where, to continue with bipolar-transistor examples, although the FET remains entirely analogous, DC or bias currents into or out of each terminal
IC_power-supply_pin
Transistor amplifier
Blackmer between 1970 and 1973. The four-transistor core of the original Blackmer cell contains two complementary bipolar current mirrors that perform log-antilog
Blackmer_gain_cell
Graphical analysis tool for electronic circuit engineering
called biasing the transistor. Several techniques are used to stabilize the operating point against minor changes in temperature or transistor operating
Load_line_(electronics)
Two-stage amplifier in an electronic circuit
using bipolar junction transistors (BJTs) or alternatively a common source stage feeding a common gate stage when using field-effect transistors (FETs)
Cascode
Junction-Less nanowire transistor (JLNT) is a type of Field-effect transistor (FET) in which the channel consists of one or more nanowires and does not
Junctionless nanowire transistor
Junctionless_nanowire_transistor
Solid-state semiconductor device
layers over MT2 to behave like a PNP transistor, which turns on because its n-type base becomes forward-biased with respect to its emitter (MT2). Thus
TRIAC
MOS field-effect transistor with more than one gate
field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The
Multigate_device
Semiconductor device capable of handling large amounts of electricity
higher frequencies than a bipolar transistor, but is limited to low-voltage applications. The insulated-gate bipolar transistor (IGBT) was developed in
Power_semiconductor_device
Variation in the effective width of the base in a bipolar junction transistor
of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage. A greater reverse bias across the collector–base
Early_effect
Technology for constructing integrated circuits
then discussed several complementary bipolar circuits. Paul Weimer, also at RCA, invented in 1962 thin-film transistor (TFT) complementary circuits, a close
CMOS
Electronic device
A single-electron transistor (SET) is a sensitive electronic device based on the Coulomb blockade effect. In this device the electrons flow through a tunnel
Single-electron_transistor
Loss of control of an exothermal process due to temperature increases
the pull-up and pull-down transistors are biased to have minimal crossover distortion at room temperature, and the biasing is not temperature-compensated
Thermal_runaway
Active electronic circuit controlling the current through a load
1N4148, are called "switching diodes". The transistor can be operated as a switch. The bipolar junction transistor (BJT) cutoff and saturation regions of
Electronic_switch
Converts light into current
is a light-sensitive transistor. A common type of phototransistor, the bipolar phototransistor, is in essence a bipolar transistor encased in a transparent
Photodiode
Experimental transistor
The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor
Tunnel field-effect transistor
Tunnel_field-effect_transistor
Diode that allows current to flow in the reverse direction at a specific voltage
emitter–base junction of a bipolar NPN transistor behaves as a Zener diode, with breakdown voltage at about 6.8 V for common bipolar processes and about 10 V
Zener_diode
Type of electronic amplifier
distortion, because currents can be switched faster than voltages in bipolar junction transistor (BJT) circuits. CFAs are usually produced with the same pin arrangements
Current-feedback operational amplifier
Current-feedback_operational_amplifier
Electrostatic discharge (ESD) protection device
is connected to the I/O pad under protection. A parasitic NPN bipolar junction transistor (BJT) is thus formed with the drain (n-type) acting as the collector
GgNMOS
Failure mode in MOSFET circuits
the two bipolar transistors gets forward biased (due to current flowing through the well, or substrate), it feeds the base of the other transistor. This
Latch-up
Classification of power amplifier
T2 and T3 is to allow back-biasing diode D2 when the amplifier output is at a positive peak (above 39.3 V) and back biasing D4 when the output is at negative
Power_amplifier_classes
Electronic circuit
moderate resistor values. The Widlar circuit may be used with bipolar transistors, MOS transistors, and even vacuum tubes. An example application is the 741
Widlar_current_source
Semiconductor diode
Baker clamps in parallel with the collector-base junctions of the bipolar transistors to prevent their saturation, thereby greatly reducing their turn-off
Schottky_diode
A synaptic transistor is an electrical device that can learn in ways similar to a neural synapse. It optimizes its own properties for the functions it
Synaptic_transistor
Type of electronic circuit
amplifier. Where bipolar junction transistors are used, the bias network must compensate for the negative temperature coefficient of the transistors' base to
Push–pull_output
Nanotechnology
environment in the channel. A nanofluidic field-effect transistor A nanofluidic bipolar transistor By introducing an asymmetric field effect along the nanochannel
Nanofluidic_circuitry
Model of electronic circuits involving transistors
model used for analyzing the small signal behavior of bipolar junction and field effect transistors. Sometimes it is also called Giacoletto model because
Hybrid-pi_model
Device used in television cameras
vidicon type tubes except the vidicon itself were able to use a light biasing technique to improve the sensitivity and contrast. The photosensitive target
Video_camera_tube
Tunneling diode
demonstrated. Vertical integration of Si/SiGe RITD and SiGe heterojunction bipolar transistors was also demonstrated, realizing a 3-terminal negative differential
Resonant_tunneling_diode
Semiconductor Fabrication Technique
the transistor "on". Because no current flows from the gate to the drain, the switching energy of a FET is very small compared to earlier bipolar junction
Self-aligned_gate
Electronic amplifier circuit type
the source. This is a common-source FET circuit. The analogous bipolar junction transistor circuit may be viewed as a transconductance amplifier or as a
Common_source
DC-DC voltage step-down power converter
semiconductors (a diode and a transistor, although modern buck converters frequently replace the diode with a second transistor used for synchronous rectification)
Buck_converter
Power semiconductor electronic device
power applications. Thyristor Gate turn-off thyristor Insulated-gate bipolar transistor Hingorani, Narain G; Laszlo Gyugi (2011). Understanding FACTS. India:
Integrated gate-commutated thyristor
Integrated_gate-commutated_thyristor
Electronic amplifier circuit type
drive low resistance loads, such as a speaker. The analogous bipolar junction transistor circuit is the common-collector amplifier. This circuit is also
Common_drain
Type of magnetometer
of Washington. Axions are a prime candidate for cold dark matter. An RF-biased DC SQUID was used to observe the dynamical Casimir effect for the first
SQUID
DC-to-DC power converter with an output voltage greater than its input voltage
power supply (SMPS) containing at least two semiconductors, a diode and a transistor, and at least one energy storage element: a capacitor, inductor, or the
Boost_converter
Characteristic quality of sounds from vacuum tube amplifiers
similar to the bipolar transistor. Yet MOSFET amplifier circuits typically do not reproduce tube sound any more than typical bipolar designs. The reason
Tube_sound
similar to a lambda diode by combining an n-channel JFET with a PNP bipolar transistor. A suggested modulatable variant but is a bit more difficult to build
Lambda_diode
Nonlinear two-terminal fundamental circuit element
semiconductor transistor, which is capacitor-based. Unlike the transistor, the final state of the memristor in terms of charge does not depend on bias voltage
Memristor
Thermometer used in electronic equipment
a silicon diode, which may be the base-emitter junction of a bipolar junction transistor (BJT), is temperature-dependent, according to the following equation:
Silicon bandgap temperature sensor
Silicon_bandgap_temperature_sensor
Type of voltage amplifier
grounded-base) amplifier is one of three basic single-stage bipolar junction transistor (BJT) amplifier topologies, typically used as a current buffer
Common_base
Electronic circuit analysis method
models exist for electron tubes, diodes, field-effect transistors (FET) and bipolar transistors, notably the hybrid-pi model and various two-port networks
Small-signal_model
Four layer semiconductor diode
constituent transistors help in maintaining the ON and OFF states. Since the construction resembles a pair of interconnected bipolar transistors, one PNP
Shockley_diode
Electrical device
typically a transistor such as a MOSFET. MOSFETs offer much higher input impedance and lower voltage drop than BJTs and do not require biasing resistors
Single-ended primary-inductor converter
Single-ended_primary-inductor_converter
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BIPOLAR TRANSISTOR-BIASING
BIPOLAR TRANSISTOR-BIASING
BIPOLAR TRANSISTOR-BIASING
BIPOLAR TRANSISTOR-BIASING
BIPOLAR TRANSISTOR-BIASING
BIPOLAR TRANSISTOR-BIASING
BIPOLAR TRANSISTOR-BIASING
BIPOLAR TRANSISTOR-BIASING
BIPOLAR TRANSISTOR-BIASING
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