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Field-effect transistor device
A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is made by thin-film deposition. TFTs are grown on
Thin-film_transistor
oxide thin-film transistor (oxide TFT) or metal oxide thin film transistor is a type of thin film transistor where the semiconductor is a metal oxide
Oxide_thin-film_transistor
Form of transistor that emits light
A light-emitting transistor or LET is a form of transistor that emits light. Higher efficiency than light-emitting diode (LED) is possible.[citation needed]
Light-emitting_transistor
Type of field-effect transistor
is able to conduct charge, akin to metal oxide semiconductors. Some OFETs are based on the thin-film transistor (TFT) model.. One common feature of OFET
Organic field-effect transistor
Organic_field-effect_transistor
Type of field-effect transistor
the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most
MOSFET
Multi-transistor electronics configuration
bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified
Darlington_transistor
Type of field-effect transistor
"Chemical Gated Field Effect Transistor by Hybrid Integration of One-Dimensional Silicon Nanowire and Two-Dimensional Tin Oxide Thin Film for Low Power Gas Sensor"
Chemical field-effect transistor
Chemical_field-effect_transistor
Type of non-planar transistor
A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the
Fin_field-effect_transistor
Family of digital circuits
metal–oxide–semiconductor, is a family of digital circuits based on p-channel, enhancement mode metal–oxide–semiconductor field-effect transistors (MOSFETs)
PMOS_logic
Diode that emits light from an organic compound
controlled sequentially, one by one Active-matrix (AMOLED) that uses a thin-film transistor (TFT) backplane to directly access and switch each individual pixel
OLED
First successful type of transistor, developed in 1947
The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and
Point-contact_transistor
Type of transistor
A unijunction transistor (UJT) is a three-lead electronic semiconductor device with only one junction. It acts exclusively as an electrically controlled
Unijunction_transistor
Type of transistor
A diffused junction transistor is a transistor formed by diffusing dopants into a semiconductor substrate. The diffusion process was developed later than
Diffused_junction_transistor
Type of field-effect transistor
A MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor)
MESFET
Type of MOSFET where the gate is electrically isolated
as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate
Floating-gate_MOSFET
Electronic component that exploits the electronic properties of semiconductor materials
the MOSFET (metal–oxide–semiconductor field-effect transistor), also called the MOS transistor. As of 2013, billions of MOS transistors are manufactured
Semiconductor_device
Type of transistor
the process their oxide got inadvertently washed off. They stumbled upon a completely different transistor, the point-contact transistor. Lillian Hoddeson
Field-effect_transistor
Device that prevents a transistor from saturating
Schottky-clamped transistor. Standard transistor–transistor logic (TTL) uses transistors as saturated switches. A saturated transistor is turned on hard
Schottky_transistor
Type of field-effect transistor
of oxide. Use of a ferroelectric (triglycine sulfate) in a solid state memory was proposed by Moll and Tarui in 1963 using a thin film transistor. Further
Fe_FET
Transistor using different semiconductor materials
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and
Heterojunction bipolar transistor
Heterojunction_bipolar_transistor
Electronic component
were constructed by connecting two rectifiers, such as the copper-oxide or germanium-oxide rectifier in antiparallel configuration. At low voltage the varistor
Varistor
Type of field-effect transistor
the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative
High-electron-mobility transistor
High-electron-mobility_transistor
Pictogram used to represent various electrical and electronic devices or functions
field-effect transistor (JFET) P-channel junction gate field-effect transistor (JFET) Metal–oxide–semiconductor field-effect transistor (MOSFET) Enhancement
Electronic_symbol
British semiconductor company
technology was used to integrate the approximately ~16,000 metal-oxide thin-film transistors on a 24.9mm2 flexible chip. Malodour classification using low-cost
Pragmatic_Semiconductor
Semiconductor light source
perhaps using indium tin oxide, a transparent electrical conductor. In this case, the bond wire(s) are attached to the ITO film that has been deposited
Light-emitting_diode
Technology for constructing integrated circuits
Complementary metal–oxide–semiconductor (CMOS /ˈsiːmɒs/ SEE-moss) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process
CMOS
Transistor with 5 active terminals
A pentode transistor is any transistor having five active terminals. One early pentode transistor was developed in the early 1950s as an improvement over
Pentode_transistor
Variant of a liquid-crystal display
A thin-film-transistor liquid-crystal display (TFT LCD) is a type of liquid-crystal display that uses thin-film transistor technology to improve image
TFT_LCD
Nonlinear two-terminal fundamental circuit element
group clearly demonstrated that the resistive switching in silicon oxide thin films is due to the formation of oxygen vacancy filaments in defect-engineered
Memristor
Type of resistive heater
heating elements. Conventional heating elements are constrained to be long and thin (often coiled to save space) to prevent current hogging. If the element was
Self-regulating_heater
Transistor that uses both electrons and holes as charge carriers
complementary metal–oxide–semiconductor (CMOS) integrated circuits relying on the field-effect transistor (FET). Bipolar transistors are still used for
Bipolar_junction_transistor
Type of bipolar junction transistor
The germanium alloy-junction transistor, or alloy transistor, was an early type of bipolar junction transistor, developed at General Electric and RCA
Alloy-junction_transistor
Type of diode
breakdown occurs, internal positive feedback (impact ionization or two transistor feedback) ensures that the diode enters a region of negative dynamic resistance
DIAC
Semiconductor device
development of the GTO, and insulated-gate bipolar transistors (IGBTs), which are members of the transistor family. They are also used in the starter circuits
Gate_turn-off_thyristor
Early type of semiconductor rectifier
early type of semiconductor rectifier in which the semiconductor is copper oxide, germanium or selenium. They were used in power applications to convert
Metal_rectifier
The Heterojunction-emitter bipolar transistor (HEBT), is a somewhat unusual arrangement with respect to emitter blocking of minority carriers. This is
Heterostructure-emitter bipolar transistor
Heterostructure-emitter_bipolar_transistor
Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction transistor Fe FET DNA field-effect
List_of_RF_connector_types
Type of solid state switch
power engineers at General Electric (GE). The metal–oxide–semiconductor field-effect transistor (MOSFET) was later invented at Bell Labs between 1959
Insulated-gate bipolar transistor
Insulated-gate_bipolar_transistor
MOS field-effect transistor with more than one gate
field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The
Multigate_device
Solid-state electrically operated switch also used as an amplifier
type of transistor, the metal–oxide–semiconductor field-effect transistor (MOSFET), was invented at Bell Labs between 1955 and 1960. Transistors revolutionized
Transistor
Semiconducting material
T; Hirano, M; Hosono, H (2003-05-23). "Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor". Science. 300 (5623): 1269–1272
Indium_gallium_zinc_oxide
Extremely sensitive solid-state photodetector
Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction transistor Fe FET DNA field-effect
Silicon_photomultiplier
Bipolar junction transistor operated in the avalanche breakdown region
An avalanche transistor is a bipolar junction transistor designed for operation in the region of its collector-current/collector-to-emitter voltage characteristics
Avalanche_transistor
Integrated circuit customized for a specific task
Micromatrix family of bipolar diode–transistor logic (DTL) and transistor–transistor logic (TTL) arrays. Complementary metal–oxide–semiconductor (CMOS) technology
Application-specific integrated circuit
Application-specific_integrated_circuit
Diode that works using quantum tunneling
state-of-the-art, with better performance at high frequencies than any transistor-based front end. The tunnel diode can also be used as a low-noise microwave
Tunnel_diode
in AMLCDs the switching device of choice for pixels has been the thin-film transistor (TFT), however MIM TFD based displays have had some commercial success
Thin-film_diode
Highly sensitive semiconductor electronic device
Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction transistor Fe FET DNA field-effect
Avalanche_photodiode
Type of junction-gate field effect transistor
The static induction transistor (SIT) is a type of field-effect transistor (FET) capable of high-speed and high-power operation, with low distortion and
Static_induction_transistor
Four-layer solid-state current-controlling device
short-circuit the anode and cathode momentarily with a push-button switch or transistor across the junction. When a negative voltage is applied to the anode and
Silicon_controlled_rectifier
Simulation of physical processes taking place in an electronic device
"Extraction of Trap States at the Oxide-Silicon Interface and Grain Boundary for Polycrystalline Silicon Thin-Film Transistors". Japanese Journal of Applied
Transistor_model
Capacitor whose capacitance can be changed
the diode. Any diode exhibits this effect (including p/n junctions in transistors), but devices specifically sold as variable capacitance diodes (also
Variable_capacitor
Central computer component that executes instructions
in large quantities. This standardization began in the era of discrete transistor mainframes and minicomputers, and has rapidly accelerated with the popularization
Central_processing_unit
Sources of electricity or hydrogen via electrolysis
oxidation potential, the monoclinic form of BiVO 4 has garnered interest from researchers. Over time, it has been shown that V-rich and compact films
Photoelectrochemical_cell
n-channel native transistor. Historically, native transistors were referred to as MOSFETs without specially grown oxide, only natural thin oxide film formed over
Native_transistor
A synaptic transistor is an electrical device that can learn in ways similar to a neural synapse. It optimizes its own properties for the functions it
Synaptic_transistor
Devices that measure magnetic field strength using the Hall effect
which were limited to laboratory instruments. Even early generation transistor technology was unsuited; it was only with the development of the low-cost
Hall-effect_sensor
Transistor type used in the flat-panel display industry
temperatures. More specifically, the use of polycrystalline silicon in thin-film transistors (LTPS-TFT) has high potential for large-scale production of electronic
Low-temperature polycrystalline silicon
Low-temperature_polycrystalline_silicon
drift-field transistor, also called the drift transistor or graded base transistor, is a type of high-speed bipolar junction transistor having a doping-engineered
Drift-field_transistor
Converts light into current
is a light-sensitive transistor. A common type of phototransistor, the bipolar phototransistor, is in essence a bipolar transistor encased in a transparent
Photodiode
DC linear voltage regulator
{R_{1}}{R_{2}}}\right)V_{\text{ref}}\ .} If a bipolar transistor is used, as opposed to a field-effect transistor or JFET, significant additional power may be
Low-dropout_regulator
Transistor with four active terminals
A tetrode transistor is any transistor having four active terminals. There were two types of tetrode transistor developed in the early 1950s as an improvement
Tetrode_transistor
Junction-Less nanowire transistor (JLNT) is a type of Field-effect transistor (FET) in which the channel consists of one or more nanowires and does not
Junctionless nanowire transistor
Junctionless_nanowire_transistor
Vacuum tube used to display images
heats the barium carbonate to decompose it into barium oxide and carbon dioxide while forming a thin layer of metallic barium on the cathode. Activation
Cathode_ray_tube
Type of voltage regulator
output transistor. The shunt regulator works by providing a path from the supply voltage to ground through a variable resistance (the main transistor is in
Linear_regulator
Form of digital logic family in integrated circuits
nMOS logic (from N-type metal–oxide–semiconductor) uses n-type (-) MOSFETs (metal–oxide–semiconductor field-effect transistors) to implement logic gates and
NMOS_logic
field-effect transistor US 1900018 Julius Edgar Lilienfeld: "Device for controlling electric current" filed on 1928-03-28, a thin film field-effect transistor GB
History_of_the_transistor
Gas-filled tube for voltage regulation employing either glow or corona discharge
Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction transistor Fe FET DNA field-effect
Voltage-regulator_tube
Microchip manipulating light instead of electricity
sources and Silicon PICs enable co-integration of the photonics with transistor based electronics. The fabrication techniques are similar to those used
Photonic_integrated_circuit
Type of thyristor
controllable thyristor, controlled by MOSFETs (metal–oxide–semiconductor field-effect transistors). It was invented by V.A.K. Temple in 1984, and was principally
MOS-controlled_thyristor
Vacuum tube used for amplifying radio waves
Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction transistor Fe FET DNA field-effect
Inductive_output_tube
Diode that allows current to flow in the reverse direction at a specific voltage
silicon transistor at around −2 mV/°C, so in a simple regulating circuit where the 4.7 V diode sets the voltage at the base of an NPN transistor (i.e. their
Zener_diode
Power amplifier
and produces a high-current drive input for the gate of a high-power transistor such as an IGBT or power MOSFET. Gate drivers can be provided either on-chip
Gate_driver
Electrical safety device that provides overcurrent protection
Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction transistor Fe FET DNA field-effect
Fuse_(electrical)
Experimental transistor
tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor field-effect
Tunnel field-effect transistor
Tunnel_field-effect_transistor
Type of display device
and market QD-enhanced TVs. Quantum dot on glass (QDOG) replaces QD film with a thin QD layer coated on top of the light-guide plate (LGP), reducing costs
Quantum_dot_display
System designed to maintain a constant voltage
used with the base of the regulating transistor connected directly to the voltage reference: A simple transistor regulator will provide a relatively constant
Voltage_regulator
Type of magnetometer
across the junction to eliminate the hysteresis (in the case of copper oxide based high-temperature superconductors the junction's own intrinsic resistance
SQUID
Type of solid-state switch
a combination of Greek language θύρα, meaning "door" or "valve", and transistor) is a solid-state semiconductor device which can be thought of as a highly
Thyristor
Connector used to connect to mains power
original on 22 January 2009, retrieved 21 January 2009 Drew Campbell Technical Film and TV for Nontechnical People, Skyhorse Publishing Inc., 2002 ISBN 1581159986
AC_power_plugs_and_sockets
Array of logic gates that are reprogrammable
cores exist alongside the programmable fabric, but they are built out of transistors instead of LUTs so they have ASIC-level performance and power consumption
Field-programmable_gate_array
Type of resistor whose resistance varies with temperature
epoxy-coated with bare or insulated lead wire and surface-mount, as well as thin film versions. The typical operating temperature range of a thermistor is −55 °C
Thermistor
Late vacuum tube design designed to compete with transistors
junction transistors, and were much smaller than conventional tubes of the day, almost approaching the compactness of early discrete transistor casings
Nuvistor
Chemical compound naturally occurring as periclase
2020122684A1 Green, Julissa (Apr 24, 2024). "Magnesium Oxide Target in Thin-Film Transistors Production". Sputter Targets. Stanford Advanced Materials
Magnesium_oxide
Electronic component
Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction transistor Fe FET DNA field-effect
Transient-voltage-suppression diode
Transient-voltage-suppression_diode
Type of electrical current converter
converter comprises two inductors, two capacitors, a switch (usually a transistor), and a diode. Its schematic can be seen in figure 1. It is an inverting
Ćuk_converter
Type of diode
one photon can be registered with these electronic devices. Avalanche transistor Transient-voltage-suppression diode L. W. Turner, (ed.), Electronics Engineer's
Avalanche_diode
Power semiconductor electronic device
applications. Thyristor Gate turn-off thyristor Insulated-gate bipolar transistor Hingorani, Narain G; Laszlo Gyugi (2011). Understanding FACTS. India:
Integrated gate-commutated thyristor
Integrated_gate-commutated_thyristor
Type of semiconductor laser diode
the industry when moving the oxide VCSELs from research and development to production mode. The oxidation rate of the oxide layer was highly dependent on
Vertical-cavity surface-emitting laser
Vertical-cavity_surface-emitting_laser
Electronic device
Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction transistor Fe FET DNA field-effect
Quantum well infrared photodetector
Quantum_well_infrared_photodetector
Two-terminal electronic component
Vacuum, Surfaces, and Films. 16 (3): 1394–1401. Bibcode:1998JVSTA..16.1394R. doi:10.1116/1.581157. ISSN 0734-2101. "Road to the Transistor". Jmargolin.com.
Diode
Obsolete electronic device for counting in decimal
for specific applications. The dekatron fell out of practical use when transistor-based counters became reliable and affordable. Today, dekatrons are used
Dekatron
Type of electrical rectifier with a liquid cathode
Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction transistor Fe FET DNA field-effect
Mercury-arc_valve
Electronic circuit formed on a small, flat piece of semiconductor material
components, such as transistors, resistors, and capacitors, and their interconnections. These components are fabricated onto a thin, flat piece ("chip")
Integrated_circuit
Passive two-terminal electrical component that stores energy in its magnetic field
using construction similar to transformers. The core is made of stacks of thin steel sheets or laminations oriented parallel to the field, with an insulating
Inductor
Device that controls current between electrodes
Beginning in the mid-1960s, thermionic tubes were being replaced by the transistor and solid-state semiconductor technology. However, the cathode-ray tube
Vacuum_tube
Vacuum tube which generates high-frequency radio waves
Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction transistor Fe FET DNA field-effect
Gyrotron
Electronic component
Klein, N.; Gafni, H. (1966). "The maximum dielectric strength of thin silicon oxide films". IEEE Transactions on Electron Devices. 13 (2): 281–289. Bibcode:1966ITED
Capacitor
Two-terminal electronic component that limits current to a specified maximum
Surface-barrier transistor Synaptic transistor Oxide thin-film transistor NOMFET Grown-junction transistor EOSFET Alloy-junction transistor Fe FET DNA field-effect
Constant-current_diode
Vacuum tube used for amplifying radio waves
receivers. In some applications klystrons have been replaced by solid state transistors. High efficiency klystrons have been developed which have 10% more efficiency
Klystron
Type of diode
changing bias and operating points of active devices such as varicaps and transistors. These circuit configurations are quite common in television tuners and
Varicap
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OXIDE THIN-FILM-TRANSISTOR
OXIDE THIN-FILM-TRANSISTOR
OXIDE THIN-FILM-TRANSISTOR
OXIDE THIN-FILM-TRANSISTOR
OXIDE THIN-FILM-TRANSISTOR
OXIDE THIN-FILM-TRANSISTOR
OXIDE THIN-FILM-TRANSISTOR
OXIDE THIN-FILM-TRANSISTOR
OXIDE THIN-FILM-TRANSISTOR
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